Samsung’s semiconductor division introduces the Universal Flash Storage (UFS) 4.0 storage standard for the first time, even before it was finally specified by JEDEC. The focus is on doubling the speed of the two transmission lanes, which together now achieve a throughput of 46.4 Gbit/s or 5.8 GB/s.
However, the first UFS 4.0 memory modules do not exhaust this limit: Samsung promises up to 4.2 GB/s reading and 2.8 GB/s writing. The speed increases, especially when writing: the UFS 3.1 storage still reached 2.1 GB/s read and 1.2 GB/s write. curious: Samsung’s announcement was made via Twitter..
In 2018, the write speed with UFS 3.0 was still 410 MB/s. Since then, JEDEC has introduced, among other things, a feature where some of the memory cells are only written with one bit instead of three to improve performance. These so-called single-level cell caches are also common in PC SSDs.
UFS 4.0 modules would be slightly faster than PCIe 3.0 SSDs with the transfer values stated in terms of sequential data movements. Samsung does not provide IOPS information for random access. Efficiency improvements are even more significant for smartphones for which UFS 4.0 is primarily intended: reading and writing data is said to be 46 percent more efficient than with UFS 3.1, leading to longer battery life. potentially longer: Samsung leads a value of 6 MB/s per milliamp on.
UFS 4.0 flash also comes in the form of stacked memory layer building blocks with an integrated controller that are just 1mm thick and have a total capacity of up to 1TB. There is usually only one memory chip in smartphones. Samsung wants to start serial production in the third quarter of 2022, so UFS 4.0 will be available for the Galaxy S23 generation of smartphones next spring.
the competitor Kioxia (formerly Toshiba) announced next generation UFS storage in February 2022, but without explicitly mentioning version 4.0. Since then, the manufacturer has been delivering the first samples; they are said to be as fast as Samsung,
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